PART |
Description |
Maker |
HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BT-7 |
DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (64Mx4) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (64Mx4) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (16Mx16) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR266A (2-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR333 (2.5-3-3) DDR SDRAM Components - 256Mbit (32Mx8) DDR333 (2.5-3-3) DDR SDRAM Components - 256Mb (32Mx8) FBGA DDR266A (2-3-3) DDR SDRAM Components - 256Mb (62Mx4) DDR266 (2-2-2)
|
Infineon
|
M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYS64V32220GDL-8 HYS64V16200GDL HYS64V16200GDL-7 H |
144 pin SO-DIMM SDRAM Modules 144引脚SO - DIMM内存模块 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 256MB PC100 (2-2-2) 2-bank End-of-Life SDRAM|16MX64|CMOS|DIMM|144PIN|PLASTIC SDRAM Modules - 128MB PC133 (3-3-3) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (3-3-3) 2-bank; End-of-Life SDRAM Modules - 128MB PC133 (2-2-2) 1-bank; End-of-Life SDRAM Modules - 256MB PC133 (2-2-2) 2-bank; End-of-Life 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
KBE00G003M-D411 KBE00G003M-D4110 |
NAND 512Mb*2 Mobile SDRAM 256Mb*2 NAND闪存12Mb * 2移动SDRAM 256Mb 2 SPECIALTY MEMORY CIRCUIT, PBGA107
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K5D5657ACM K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
K4S560832E-NCL75 K4S561632E-NCL60 K4S561632E-NCL75 |
16M x 16 SDRAM, LVTTL, 133MHz 256Mb E-die SDRAM Specification 54pin sTSOP-II
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
HYMP564S648-E3 HYMP564S648-C4 HYMP532S646-E3 HYMP5 |
200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 512 Mb 1st ver. DDR2 SDRAM - SO DIMM 256MB DDR2 SDRAM - SO DIMM 512MB DDR2 SDRAM - SO DIMM 1GB
|
HYNIX[Hynix Semiconductor]
|
M368L3313DTL-CB0 M368L3313DTL-CB3 M368L3313DTL-CA2 |
256MB DDR SDRAM MODULE (32Mx64(16Mx64*2 bank) based on 16Mx8 DDR SDRAM)
|
Samsung semiconductor
|
HYM72V32636BLT8-K HYM72V32636BT8-K HYM72V32636BLT8 |
SDRAM - Unbuffered DIMM 256MB SDRAM|32MX64|CMOS|DIMM|168PIN|PLASTIC
|
Hynix Semiconductor
|
HYM72V32C736BLT8-K HYM72V32C736BT8-K HYM72V32C736B |
SDRAM - Registered DIMM 256MB SDRAM|32MX72|CMOS|DIMM|168PIN|PLASTIC
|
Hynix Semiconductor
|
HB52R649E1U-B6B HB52R649E1U-A6B |
512 MB Registered SDRAM DIMM 64-Mword × 72-bit, 100 MHz Memory Bus, 1-Bank Module (18 pcs of 64 M × 4 Components) PC100 SDRAM
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Elpida Memory
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